WebIRHF7430SE 100K Rads (Si) 1.77Ω 2.5A JANSR2N7464T2 Features: Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Neuton Tolerant Simple Drive … WebIRHF7430SE Author: mkapish1 Subject: IRHF7430SE Created Date: 5/21/2001 10:25:28 AM ...
IRHF7430SE - Infineon Technologies MOSFET
IRHF7430SE Overview Parametrics Documents Order Packaging Support Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad (Si) TID, COTS Features Single Event Effect (SEE) Hardened Ultra low RDS (on) Low total gate charge Neutron tolerant Simple Drive Requirements Hermetically Sealed Light weight WebThe BUY65CS08J-01 (ES) from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 8 A, Drain Source Resistance 370 to 900 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 5 V. Tags: Surface Mount. More details for BUY65CS08J-01 (ES) can be seen below. number of time outs in volleyball
IRHF7430SE JANSR2N7464T2 RADIATION HARDENED …
Webwww.irf.com 3 Pre-Irradiation IRHN7250SE Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. WebDownload schematic symbols, PCB footprints, pinout & datasheets for the IRHF7430SE by Infineon. proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line. Exports to OrCAD, Allegro, Altium, … WebIRHF7430SE, JANSR2N7464T2 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. ninth district opportunity inc gainesville ga